Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch: Difference between revisions
No edit summary |
No edit summary |
||
Line 190: | Line 190: | ||
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano12|Images]] | |[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano12|Images]] | ||
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano13|Images]] | |[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano13|Images]] | ||
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano121|Images]] | |||
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano14|Images]] | |[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano14|Images]] | ||
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano141|Images]] | |[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano141|Images]] |
Revision as of 07:23, 2 May 2011
Recipe | nano1.0 | nano1.1 | nano1.2 | nano1.3 | nano1.21 | nano1.4 | nano1.41 | |
---|---|---|---|---|---|---|---|---|
C4F8 (sccm) | 52 | 52 | 52 | 52 | 75 | 75 | 75 | |
SF6 (sccm) | 38 | 38 | 38 | 38 | 38 | 38 | 38 | |
O2 (sccm) | 0 | 0 | 0 | 0 | 0 | 0 | 0 | |
Coil power (W) | 800 (forward) | 600 (forward) | 800 (forward) | 600 (forward) | 800 (forward) | 800 (forward) | 800 (forward) | |
Platen power (W) | 50 | 50 | 50 | 40 | 50 | 50 | 75 | |
Pressure (mtorr) | 4 | 4 | 4 | 4 | 4 | 4 | 4 | |
Temperature (degs C) | 10 | 10 | -10 | -10 | -10 | -20 | -20 | |
Process time (s) | 120 | 120 | 120 | 120 | 120 | |||
Nominal line width | Etched depths (nm) | |||||||
30 nm | ||||||||
60 nm | ||||||||
90 nm | ||||||||
120 nm | ||||||||
150 nm | ||||||||
Nominal line width | Etch rates in trenches (nm/min) | |||||||
30 nm | ||||||||
60 nm | ||||||||
90 nm | ||||||||
120 nm | ||||||||
150 nm | ||||||||
Etch rates in zep resist (nm/min) | ||||||||
One point on wafer | ||||||||
Images | Images | Images | Images | Images | Images | Images | Images |
The nanoetch