Specific Process Knowledge/Lithography/Strip: Difference between revisions
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==Process power for plasma asher 4 & 5== | ==Process power for plasma asher 4 & 5== | ||
[[File:PA_power_v1.png|320px|thumb|Ashing rate as function of microwave power.|right]] | [[File:PA_power_v1.png|320px|thumb|Ashing rate as function of microwave power.|right]] | ||
The ashing rate is related to the power used during processing. Higher power gives higher ashing rate. | The ashing rate is related to the power used during processing. Higher power gives higher ashing rate. <span style="color:red">There is an unexpected peak at 800 W which we will investigate further.</span> | ||
Test using a single 100 mm wafer in the center of the process chamber shows that a power of 1000 W gives the highest ashing rate. | Test using a single 100 mm wafer in the center of the process chamber shows that a power of 1000 W gives the highest ashing rate. | ||