Specific Process Knowledge/Lithography/Strip: Difference between revisions

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@@ Line 231: / Line 231: @@
 <b>Test parameters:</b><br>
 Total gas flow rate: 500 sccm<br>
-Gas mix ratio: set to test ratios<br>
+Gas mix ratio: tested parameter<br>
 DSC: not used for this test<br>
 Chamber pressure: 1.2 mbar<br>
@@ Line 248: / Line 248: @@
 Total gas flow rate: 150 sccm<br>
 Gas mix ratio: 30% nitrogen<br>
-DSC: set to test pressures<br>
+DSC: tested parameter<br>
-Chamber pressure: set to test pressures<br>
+Chamber pressure: tested parameter<br>
 Power: 1000 W<br>
 Processing time: 2 minutes<br>
@@ Line 262: / Line 262: @@
 <b>Test parameters:</b><br>
-Total gas flow rate: set to tested flow rates<br>
+Total gas flow rate: tested parameter<br>
 Gas mix ratio: 30% nitrogen<br>
 DSC: 1.3 mbar<br>
@@ Line 282: / Line 282: @@
 DSC: 1.3 mbar<br>
 Chamber pressure: 1.3 mbar<br>
-Power: set to tested power<br>
+Power: tested parameter<br>
 Processing time: 2 minutes<br>
 Temperature (average): 43°C
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+==Process temperature for plasma asher 4 & 5==
+[[File:PA_temperature_v1.png|320px|thumb|Ashing rate as function of temperature.|right]]
+The ashing rate is related to the temperature during processing. Higher temperature gives higher ashing rate.
+Test using a single 100 mm wafer in the center of the process chamber shows that increasing processing temperature gives increasing ashing rate.
+<b>Test parameters:</b><br>
+Total gas flow rate: 200 sccm<br>
+Gas mix ratio: 30% nitrogen<br>
+DSC: 1.3 mbar<br>
+Chamber pressure: 1.3 mbar<br>
+Power: 1000 W<br>
+Processing time: 2 minutes<br>
+Temperature (average): tested parameter
+<br clear="all" />
 ==Plasma Asher 1==