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Etching of nanostructures in Si using DRIE-Pegasus: nano1.21 recipe, Run ID 1925, time 120 secs, SF6 38, C4F8 75, 4mtorr, 800/50 coil/platen, -10 degs.
 
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Latest revision as of 10:24, 13 April 2011

Etching of nanostructures in Si using DRIE-Pegasus: nano1.21 recipe, Run ID 1925, time 120 secs, SF6 38, C4F8 75, 4mtorr, 800/50 coil/platen, -10 degs.

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current10:24, 13 April 2011Thumbnail for version as of 10:24, 13 April 20111,024 × 768 (109 KB)Jml (talk | contribs)Etching of nanostructures in Si using DRIE-Pegasus: nano1.21 recipe, Run ID 1925, time 120 secs, SF6 38, C4F8 75, 4mtorr, 800/50 coil/platen, -10 degs.
10:22, 13 April 2011Thumbnail for version as of 10:22, 13 April 20111,024 × 768 (88 KB)Jml (talk | contribs)Etching of nanostructures in Si using DRIE-Pegasus: nano1.21 recipe, Run ID 1925, time 120 secs, SF6 38, C4F8 75, 4mtorr, 800/50 coil/platen, -10 degs.

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