Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano13: Difference between revisions
Appearance
| Line 31: | Line 31: | ||
|- | |- | ||
| Mask | | Mask | ||
| | | 211 nm zep etched down 117 nm | ||
|- | |- | ||
|} | |} | ||
Revision as of 14:24, 4 May 2011
The nano1.3 recipe
| Recipe | Gas | C4F8 38 sccm, SF6 52 sccm |
|---|---|---|
| Pressure | 4 mTorr, Strike 3 secs @ 15 mTorr | |
| Power | 600 W CP, 40 W PP | |
| Temperature | -10 degs | |
| Hardware | 100 mm Spacers | |
| Time | 60 secs (a) and 120 secs (b) | |
| Conditions | Run ID | (a) 1856 and (b) 1856+1857 |
| Conditioning | Sequence: Oxygen clean, processes, no oxygen between runs | |
| Mask | 211 nm zep etched down 117 nm |
- The results of the nano1.3 recipe
-
The 30 nm trenches after 60 secs.
-
The 60 nm trenches after 60 secs.
-
The 90 nm trenches after 60 secs.
-
The 120 nm trenches after 60 secs.
-
The 150 nm trenches after 60 secs.
-
The 30 nm trenches after 120 secs.
-
The 60 nm trenches after 120 secs.
-
The 90 nm trenches after 120 secs.
-
The 120 nm trenches after 120 secs.
-
The 150 nm trenches after 120 secs.