Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano13: Difference between revisions
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Revision as of 14:24, 4 May 2011
The nano1.3 recipe
Recipe | Gas | C4F8 38 sccm, SF6 52 sccm |
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Pressure | 4 mTorr, Strike 3 secs @ 15 mTorr | |
Power | 600 W CP, 40 W PP | |
Temperature | -10 degs | |
Hardware | 100 mm Spacers | |
Time | 60 secs (a) and 120 secs (b) | |
Conditions | Run ID | (a) 1856 and (b) 1856+1857 |
Conditioning | Sequence: Oxygen clean, processes, no oxygen between runs | |
Mask | 211 nm zep etched down 117 nm |
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The 30 nm trenches after 60 secs.
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The 60 nm trenches after 60 secs.
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The 90 nm trenches after 60 secs.
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The 120 nm trenches after 60 secs.
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The 150 nm trenches after 60 secs.
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The 30 nm trenches after 120 secs.
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The 60 nm trenches after 120 secs.
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The 90 nm trenches after 120 secs.
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The 120 nm trenches after 120 secs.
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The 150 nm trenches after 120 secs.