Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions
| Line 374: | Line 374: | ||
|Running 1800W/150W at increased time to etch down to 1500 nm. | |Running 1800W/150W at increased time to etch down to 1500 nm. | ||
| | | | ||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier '''10 min etch''', H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W" perrow="6" widths="200px" heights="150px"> | <gallery caption="C10161 SiO2 etch with Cr mask on wafer piece on Si carrier '''10 min etch''', H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W" perrow="6" widths="200px" heights="150px"> | ||
File:C10161_01.jpg | File:C10161_01.jpg | ||
File:C10161_03.jpg | File:C10161_03.jpg | ||