Specific Process Knowledge/Lithography/EBeamLithography/EBLProcessExamples: Difference between revisions
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For both of the single shot approaches the SHOT mode defined in the SDF file should be SHOT S, rather than the normal SHOT A. | For both of the single shot approaches the SHOT mode defined in the SDF file should be SHOT S, rather than the normal SHOT A. | ||
SHOT A mode is used with the RESIST command to define an area dose in µC/cm2 and the beam pitch in 1/4 nm steps. The following will for instance define an area dose of 300 µC/ | SHOT A mode is used with the RESIST command to define an area dose in µC/cm2 and the beam pitch in 1/4 nm steps. The following will for instance define an area dose of 300 µC/cm<big>2</big> and a beam pitch of 200 nm (800 x 1/4 nm): | ||
'''RESIST 300''' | '''RESIST 300''' | ||