Specific Process Knowledge/Lithography/EBeamLithography/EBLProcessExamples: Difference between revisions
| Line 4: | Line 4: | ||
Using mix-and-match it is possible to combine EBL and UV lithography using selected resists. Read more on the [[Specific_Process_Knowledge/Lithography/Mix-and-match|Mix-and-match page.]] | Using mix-and-match it is possible to combine EBL and UV lithography using selected resists. Read more on the [[Specific_Process_Knowledge/Lithography/Mix-and-match|Mix-and-match page.]] | ||
= | =Circle arrays by single spot EBL on JEOL 9500= | ||
Arrays of circular holes can be created by normal area writing of a mask of circular structures, this is illustrated in the left side of the figure below. In this case the drawn circles are filled with beam shots, just like for any other area based exposure. For large arrays this can however be quite slow and hence it can be faster to write circles with local overexposure of single beam shots, i.e. a setup where the beam is pitched at the required circle pitch and the beam dwells at each site to produce a circle of the required size. In this approach dwell times will typically be in the order of several 100 ns to a few µs. | Arrays of circular holes can be created by normal area writing of a mask of circular structures, this is illustrated in the left side of the figure below. In this case the drawn circles are filled with beam shots, just like for any other area based exposure. For large arrays this can however be quite slow and hence it can be faster to write circles with local overexposure of single beam shots, i.e. a setup where the beam is pitched at the required circle pitch and the beam dwells at each site to produce a circle of the required size. In this approach dwell times will typically be in the order of several 100 ns to a few µs. | ||