Jump to content

Specific Process Knowledge/Thermal Process/Oxidation: Difference between revisions

← Older editNewer edit →
VisualWikitext
Pevo (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
2,329 edits
Pevo (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
2,329 edits
Line 4: Line 4:


==Oxidation==
==Oxidation==
At DTU Nanolab we have seven furnaces and one RTP (rapid thermal processor) for thermal oxidation of silicon samples: Boron Drive-in + Pre-dep furnace (A1), Gate Oxide furnace (A2), Phosphorous Drive-in furnace (A3), Anneal-oxide furnace (C1), Anneal-Bond furnace (C3), Al-Anneal furnace (C3), Multipurpose Annealing furnace and RTP Annealsys.
At DTU Nanolab we have seven furnaces and one RTP (rapid thermal processors) for thermal oxidation of silicon samples: Boron Drive-in + Pre-dep furnace (A1), Gate Oxide furnace (A2), Phosphorous Drive-in furnace (A3), Anneal-oxide furnace (C1), Anneal-Bond furnace (C3), Al-Anneal furnace (C3), Resist Pyrolysis furnace and RTP Annealsys.


Thermal oxidation can take place either by a dry process or by a wet process, depending on what furnace that is used for the oxidation. The film quality for a dry oxide is better than the film quality for a wet oxide with regards to density and dielectric constant. However, the oxidation rate is slow for dry oxidation.
Thermal oxidation can take place either by a dry process or by a wet process, depending on what furnace that is used for the oxidation. The film quality for a dry oxide is better than the film quality for a wet oxide with regards to density and dielectric constant. However, the oxidation rate is slow for dry oxidation.
Line 15: Line 15:




Thermal oxidation can done at temperatures up to 1150 C (but only 1100 C in C1 furnace and 1050 C the Multipurpose Anneal furnace). At these very high temperatures, the quartz tube in the furnaces might start to deform, so therefore the oxidation times are restricted:
Thermal oxidation can done at temperatures up to 1050 C - 1150 C, depending on the furnace - and especially the diameter of the furnace tube. At these high temperatures, the quartz tube in the furnaces might start to deform, so therefore the oxidation times are restricted:




*Maximum allowed oxidation time at 1150 C: 8 hours
*A1, A2, A3, C3 and C4 furnaces: Maximum allowed oxidation time at 1150 C: 8 hours
*Maximum allowed oxidation time at 1100 C: 23 hours (this will result in ~3 um wet oxide)
*A1, A2, A3, C1, C3, C3, E1 furnaces: Maximum allowed oxidation time at 1100 C: 23 hours (this will result in ~3 um wet oxide)
 
*Resist Pyrolysis furnace: Maximum allowed oxidation time at 1050 C: 3 hours


The standard recipes, quality control limits and results for the Boron Drive-in + Pre-dep furnace (A1) and the Phosphorus Drive-in furnace (A3) can be found here:  
The standard recipes, quality control limits and results for the Boron Drive-in + Pre-dep furnace (A1) and the Phosphorus Drive-in furnace (A3) can be found here:  
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thermal_Process/Oxidation"