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Specific Process Knowledge/Thermal Process/Oxidation: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
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Pevo (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
2,366 edits
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|Dry and wet oxidation of 100 mm and 150 mm wafers. Oxidation of new wafers without RCA cleaning. Oxidation and annealing of wafers from the LPCVD furnaces and PECVD4.  
|Dry and wet oxidation of 100 mm and 150 mm wafers. Oxidation of new wafers without RCA cleaning. Oxidation and annealing of wafers from the LPCVD furnaces and PECVD4.  
|Dry and wet oxidation and annealing of wafers from Wafer Bonder 02 and from PECVD4 and PECVD3.
|Dry and wet oxidation and annealing of wafers from Wafer Bonder 02 and from PECVD4 and PECVD3.
|Dry oxidation and annealing of almost all materials.
|Pyrolysis of different resists, annealing in N<sub>2</sub>, dry oxidation of silicon
|Rapid thermal processing: RTA (annealing), RTO (oxidation), RTN (nitridation) and RTH (hydrogenation).
|Rapid thermal processing: RTA (annealing), RTO (oxidation), RTN (nitridation) and RTH (hydrogenation).
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*N<sub>2</sub>
*N<sub>2</sub>
*H<sub>2</sub>
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*Ar
*Ar
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*900 <sup>o</sup>C - 1150 <sup>o</sup>C
*900 <sup>o</sup>C - 1150 <sup>o</sup>C
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*Vacuum: 20 <sup>o</sup>C - 1050 <sup>o</sup>C
*25 <sup>o</sup>C - 1050 <sup>o</sup>C, max 3 hours at 1050 <sup>o</sup>C
*No vacuum: 20 <sup>o</sup>C - 1100 <sup>o</sup>C
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*700 <sup>o</sup>C - 1200 <sup>o</sup>C
*700 <sup>o</sup>C - 1200 <sup>o</sup>C
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*1-30 100 mm wafers
*1-30 100 mm wafers
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*1-30 50 mm, 100 mm or 150 mm wafers  
*1-30 50 mm, 100 mm or 150 mm wafers per run
*1-50 200 mm wafers
*Smaller samples (placed on a Si carrier wafer)
*Small samples on a carrier wafer, horizontal
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*Single-wafer process
*Single-wafer process
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*All processed wafers have to be RCA cleaned, except for wafers from Wafer Bonder 02 and from PECVD4 and PECVD3.
*All processed wafers have to be RCA cleaned, except for wafers from Wafer Bonder 02 and from PECVD4 and PECVD3.
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*Depends on the furnace quartz set:
*Only samples for resist pyrolysis, and all sample materials have to be approved by DTU Nanolab. Samples with metals and III-V materials are NOT allowed
**Metal: Almost all materials, permission is needed
**Resist pyrolysis
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*Silicon
*Silicon
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