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Specific Process Knowledge/Characterization/Stress measurement: Difference between revisions

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The procedure is as follows:
The procedure is as follows:


When deposition on one side of the wafer:
====When deposition on one side of the wafer:====
#Measure the wafer bow on one of the profilometers (Tencor or Dektak 8). Save the measurement. It is a good idea to measure across most of the wafer in two directions perpendicular to each other.
#Measure the wafer bow on one of the profilometers (Tencor or Dektak 8). Save the measurement. It is a good idea to measure across most of the wafer in two directions perpendicular to each other.
#Deposite the thin film
#Deposite the thin film
#Measure the wafer bow again:
#*On the same profilometer as used for the pre-measurement.
#*With the same recipe as used for the pre-mesurement.
#*On the same position/positions on the wafer as the pre-measurement .
#Measure the thickness  of the substrate
#Measure the thickness of the thin film (ex. using the FilmTek or the Ellipsometer is possible).
#Use the program for stress measurement in the profilometer software on the profilometer you used for the measurements. Use both the pre-stress measurement and the post-stress measurement.
====When deposition on both sides of the wafer:====
#Deposite the thin film
#Pre-measurement: Measure the wafer bow on one of the profilometers (Tencor or Dektak 8). Save the measurement. It is a good idea to measure across most of the wafer in two directions perpendicular to each other.
#Remove the thin film from one side of the wafer. If it is a single side polished wafer, remove it on the non-polished side.
#Measure the wafer bow again:  
#Measure the wafer bow again:  
#*On the same profilometer as used for the pre-measurement.  
#*On the same profilometer as used for the pre-measurement.