Specific Process Knowledge/Lithography/EBeamLithography/FirstEBL: Difference between revisions
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=Development= | =Development= | ||
Development of EBL resist can be done in two ways, either in beakers or on the semi-automatic E-beam developer tool, [[Specific_Process_Knowledge/Lithography/Development#Developer:_E-beam|Developer:E-beam.]] The latter is equipped with ZED N50 for development of | Development of EBL resist can be done in two ways, either in beakers or on the semi-automatic E-beam developer tool, [[Specific_Process_Knowledge/Lithography/Development#Developer:_E-beam|Developer:E-beam.]] The latter is equipped with ZED N50 for development of CSAR (AR-P 6200). The system can handle chips or wafers up to 8”. It has predefined develop cycle times of 15, 30, 60 and 120 seconds. For other developers users have to use the EBL development fumehood in E4 and manually develop their substrates in beakers of appropriate size. Please observe there are beakers dedicated solvent developers such as isopropanol and other beakers dedicated alkaline developers. | ||
For this turorial job we simply put the 4" wafer on the center of the vacuum chuck, clamp it with vacuum, select the 60 sec AR 600-546 recipe and press start. | For this turorial job we simply put the 4" wafer on the center of the vacuum chuck, clamp it with vacuum, select the 60 sec AR 600-546 recipe and press start. | ||
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Developer: E-beam is a semi-automatic puddle developer with | Developer: E-beam is a semi-automatic puddle developer with ZED N50 developer. | ||
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