Specific Process Knowledge/Lithography/EBeamLithography/JEOL 9500 User Guide: Difference between revisions
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*The spot beam for electron beam writing is generated by a ZrO/W emitter and a four-stage electron beam focusing lens system. | *The spot beam for electron beam writing is generated by a ZrO/W emitter and a four-stage electron beam focusing lens system. | ||
*The maximum frequency of the deflector scanner is | *The maximum frequency of the deflector scanner is 200 MHz, i.e. the minimum beam dwell time is 5 ns. | ||
*The acceleration voltage is locked at 100 kV. | *The acceleration voltage is locked at 100 kV. | ||
*The e-beam writer can pattern structures with a minimum resolution of 10 nm. | *The e-beam writer can pattern structures with a minimum resolution of 10 nm. | ||