Jump to content

Specific Process Knowledge/Lithography/EBeamLithography/AR-P 617: Difference between revisions

← Older editNewer edit →
VisualWikitext
Thope (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231
2,179 edits
Thope (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231
2,179 edits
Line 78: Line 78:
{| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
{| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
|-
|-
| [[file:ARP617_240212_D1005.tif|800px]]
| [[image:ARP617_240212_D1005.png|800px]]
|-  
|-  
| colspan="1" style="text-align: center;|
| colspan="1" style="text-align: center;|
AR-P 617.06 contrast curve from three different soft bake temperatures. Fitted lines are for determining contrast.
Bi-layer resist stack exposed at 400 µC/cm<sup>2</sup>.
|}
|}
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/EBeamLithography/AR-P_617"