Jump to content

Specific Process Knowledge/Lithography/EBeamLithography/AR-P 617: Difference between revisions

← Older editNewer edit →
VisualWikitext
Thope (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231
2,179 edits
Thope (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231
2,179 edits
Line 56: Line 56:


Bi-layer resist stack for lift off process:
Bi-layer resist stack for lift off process:
*Date: February 8th 2024
*Date: February 12th 2024
*Substrate: 2" Si
*Substrate: 2" Si
*Exposure tool: JEOL 9500 at 100 kV
*1st layer coating
*1st layer coating
**Coater: Labspin 2
**Coater: Labspin 2
**RPM: 4000
**Spin time: 60 sec
**Acceleration: 1000 RPM/s
**Soft bake: 200C for 120 sec (setpoint at 222C)
*2nd layer coating
**Coater: Gamma E-beam & UV
**Recipe: 2325-DCH 50mm CSAR 250nm
*Exposure tool: JEOL 9500 - 100 kV @ 29 nA
*1st development
**Developer: EBL Manual
**Recipe: N50 90 sec
*2nd development
**Manual development in fumehood 10 - AR 600-50 for 90 sec and 30 sec IPA rinse
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/EBeamLithography/AR-P_617"