Specific Process Knowledge/Lithography/EBeamLithography/AR-P 617: Difference between revisions
| Line 53: | Line 53: | ||
=Dual layer for lift off= | =Dual layer for lift off= | ||
AR-P 617 can be used together with AR-P 6200 (CSAR) for a bi-layer lift-off friendly resist stack, where a slight undercut is made in the bottom layer. AR-P 617 has a higher sensitivity than AR-P 6200 and thus, if AR-P 617 is applied as the bottom layer, the higher sensitivity can lead to an undercut under the AR-P 6200 layer. The example below illustrates the process. | |||
Bi-layer resist stack for lift off process: | |||
*Date: February 8th 2024 | |||
*Substrate: 2" Si | |||
*Exposure tool: JEOL 9500 at 100 kV | |||