Specific Process Knowledge/Thin film deposition/Deposition of Germanium: Difference between revisions

!  

! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])

! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])

! Sputtering ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])

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! General description

|Thermal deposition of Ge

|E-beam deposition of Ge

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! Pre-clean

|none

|Ar ion etch (only in E-beam evaporator Temescal)

! Layer thickness

|10 Å to about 2000 Å (in total distributed on all loaded wafers)

|few nm to about 1 µm*  

|10 Å to at least 1000 Å

! Deposition rate

|0.4 Å/s - ~ 2 Å/s  

|1 Å/s - 5 Å/s  

|Depends on deposition parameters

*6x 4" wafers or

*6x 6" wafers or

Many small pieces

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! Allowed materials

|

Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=167 cross-contamination sheet].