Specific Process Knowledge/Thin film deposition/Deposition of Silicon: Difference between revisions
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DTU Nanolab has two furnaces for deposition of LPCVD (Low Chemical Vapour Deposition) polysilicon: A 6" furnace (installed in 2011) for deposition of standard polySi, amorphous polySi and boron doped polySi on 100 mm or 150 mm wafers and a 4" furnace (installed in 1995) for deposition of standard polySi, amorphous polySi, boron- and phosphorous doped polySi on 100 mm wafers. In LabManager the two furnaces are named "Furnace: LPCVD Poly-Si (4") (B4)" and "Furnace: LPCVD Poly-Si (6") (E2)", respectively. | DTU Nanolab has two furnaces for deposition of LPCVD (Low Chemical Vapour Deposition) polysilicon: A 6" furnace (installed in 2011) for deposition of standard polySi, amorphous polySi and boron doped polySi on 100 mm or 150 mm wafers and a 4" furnace (installed in 1995) for deposition of standard polySi, amorphous polySi, boron- and phosphorous doped polySi on 100 mm wafers. In LabManager the two furnaces are named "Furnace: LPCVD Poly-Si (4") (B4)" and "Furnace: LPCVD Poly-Si (6") (E2)", respectively. | ||
*[[ | *[[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Deposition of Polysilicon using the 4" Polysilicon Furnace|Deposition of Polysilicon using the 4" Polysilicon Furnace]] | ||
*[[ | *[[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Deposition of Polysilicon using the 6" Polysilicon Furnace|Deposition of Polysilicon using the 6" Polysilicon Furnace]] | ||
==Deposition of Silicon using PECVD== | ==Deposition of Silicon using PECVD== | ||