Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions
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*Pressure:Fully open APC valve ('''<2 mTorr''') | *Pressure:Fully open APC valve ('''<2 mTorr''') | ||
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A' | *Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A' | ||
|Due to the large sidewall roughness I decided to try and run at lower powers because it looked at some images like an ionbonbardment effect. First try with 600W/50W. The profile looks fairly good but still with some sidewall roughness. there is also some trenching and the Cr mask looks has a facet all the way down to the SiO2. The is also some bowing. | |Due to the large sidewall roughness I decided to try and run at lower powers because it looked at some images like an ionbonbardment effect. First try with 600W/50W. The profile looks fairly good but still with some sidewall roughness. there is also some trenching and the Cr mask looks has a facet all the way down to the SiO2. The is also some bowing. | ||
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<gallery caption=" C10751: SiO2 etch with Cr mask on wafer piece on Si carrier 20 min etch, EM:0/0 H2:0sccm, C4F8:6.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 50W, coil power:600W" perrow="7" widths="200px" heights="150px"> | <gallery caption=" C10751: SiO2 etch with Cr mask on wafer piece on Si carrier 20 min etch, EM:0/0 H2:0sccm, C4F8:6.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 50W, coil power:600W" perrow="7" widths="200px" heights="150px"> | ||
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*Pressure:Fully open APC valve (<2 mTorr) | *Pressure:Fully open APC valve (<2 mTorr) | ||
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A' | *Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A' | ||
|Repeating with longer etch time. Low sidewall roughness, less faceting of the Cr mask. Still some trenching and bowing. | |Repeating with longer etch time. Low sidewall roughness, less faceting of the Cr mask. Still some trenching and bowing or negative tapering of the profile. | ||
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<gallery caption=" C10834: SiO2 etch with Cr mask on wafer piece on Si carrier 45 min etch, EM:0/0 H2:0sccm, C4F8:6.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 25W, coil power:300W" perrow="6" widths="200px" heights="150px"> | <gallery caption=" C10834: SiO2 etch with Cr mask on wafer piece on Si carrier 45 min etch, EM:0/0 H2:0sccm, C4F8:6.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 25W, coil power:300W" perrow="6" widths="200px" heights="150px"> | ||
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*Pressure:Fully open APC valve (<2 mTorr) | *Pressure:Fully open APC valve (<2 mTorr) | ||
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A' | *Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A' | ||
|Decreased the platen power a little to see if this could remove the trenching. Not much different from the last. | |||
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<gallery caption=" C10844: SiO2 etch with Cr mask on wafer piece on Si carrier 50 min etch, EM:0/0 H2:0sccm, C4F8:6.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 20W, coil power:300W" perrow="6" widths="200px" heights="150px"> | <gallery caption=" C10844: SiO2 etch with Cr mask on wafer piece on Si carrier 50 min etch, EM:0/0 H2:0sccm, C4F8:6.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 20W, coil power:300W" perrow="6" widths="200px" heights="150px"> | ||
File:C10844_02.jpg | File:C10844_02.jpg | ||