Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions
| Line 485: | Line 485: | ||
*Pressure:Fully open APC valve (8-9 mTorr) | *Pressure:Fully open APC valve (8-9 mTorr) | ||
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A' | *Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A' | ||
|I repeated the start setting but without the EM coils. This gives a very none uniform etch over the wafer where in some parts it deposites instead of etching. The profile of 800 nm oitch look fairly good but a closer look reveals the the sidewall is very rough from either redeposition or polymerization. this cannot be removed with a O2 plasma. | |||
| | | | ||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0" perrow="7" widths="200px" heights="150px"> | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0" perrow="7" widths="200px" heights="150px"> | ||
File:C10576_02.jpg | File:C10576_02.jpg | ||