Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions
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*Pressure:Fully open APC valve (3.9 mTorr) | *Pressure:Fully open APC valve (3.9 mTorr) | ||
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A' | *Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A' | ||
|Adding the oxygen again further increased the etch rate and reduced the CD (Critical Dimension) of the Cr mask. | |||
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<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.9mTorr; platen power 200W, coil power:2500W" perrow="7" widths="200px" heights="150px"> | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.9mTorr; platen power 200W, coil power:2500W" perrow="7" widths="200px" heights="150px"> | ||
File:C10399_01.jpg | File:C10399_01.jpg | ||