Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions
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*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A' | *Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A' | ||
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN | *PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN | ||
|Reducing total flow rate gives less passivation/redeposition. | |Reducing total flow rate and thereby the pressure gives less passivation/redeposition. Sidewall roughness not so bad. | ||
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<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:225sccm, Pressure:3.35mTorr" perrow="6" widths="200px" heights="150px"> | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:225sccm, Pressure:3.35mTorr" perrow="6" widths="200px" heights="150px"> | ||
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*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A' | *Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A' | ||
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN | *PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN | ||
|Reducing the coil power a lot and platen power a little gives more sidewall passivationØ/redeposition | |||
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<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:225sccm, Pressure:3.35mTorr; platen power 150W, coil power:1200W" perrow="6" widths="200px" heights="150px"> | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:225sccm, Pressure:3.35mTorr; platen power 150W, coil power:1200W" perrow="6" widths="200px" heights="150px"> | ||
File:C10084_15.jpg | File:C10084_15.jpg | ||