Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions
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*Coil Power [W]:1200 | *'''Coil Power [W]:1200''' | ||
*Platen Power [W]: 100 | *'''Platen Power [W]: 100''' | ||
*Platen temperature [<sup>o</sup>C]: 20 | *Platen temperature [<sup>o</sup>C]: 20 | ||
*H2 flow [sccm]:0 | *H2 flow [sccm]:0 | ||
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*He flow [sccm]:205 | *He flow [sccm]:205 | ||
*Pressure:Fully open APC valve (3.9 mTorr) | *Pressure:Fully open APC valve (3.9 mTorr) | ||
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A' | *'''Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'''' | ||
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<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.9mTorr; platen power 100W, coil power:1200W" perrow="7" widths="200px" heights="150px"> | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.9mTorr; platen power 100W, coil power:1200W" perrow="7" widths="200px" heights="150px"> | ||
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*Coil Power [W]:2500 | *'''Coil Power [W]:2500''' | ||
*Platen Power [W]: 100 | *Platen Power [W]: 100 | ||
*Platen temperature [<sup>o</sup>C]: 20 | *Platen temperature [<sup>o</sup>C]: 20 | ||
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*Coil Power [W]:2500 | *Coil Power [W]:2500 | ||
*Platen Power [W]: 200 | *'''Platen Power [W]: 200''' | ||
*Platen temperature [<sup>o</sup>C]: 20 | *Platen temperature [<sup>o</sup>C]: 20 | ||
*H2 flow [sccm]:0 | *H2 flow [sccm]:0 | ||
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*'''14 min''' | |||
*Coil Power [W]:2500 | *Coil Power [W]:2500 | ||
*Platen Power [W]: 200 | *Platen Power [W]: 200 | ||
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*'''Back to start setting without EM coils - 14 min''' | |||
*Coil Power [W]:2500 | *Coil Power [W]:2500 | ||
*Platen Power [W]: 200 | *Platen Power [W]: 200 | ||
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*Coil Power [W]:600 | *'''Coil Power [W]:600''' | ||
*Platen Power [W]: 50 | *'''Platen Power [W]: 50''' | ||
*Platen temperature [<sup>o</sup>C]: 20 | *Platen temperature [<sup>o</sup>C]: 20 | ||
*H2 flow [sccm]:0 | *H2 flow [sccm]:0 | ||
*O2 flow [sccm]: 10 | *'''O2 flow [sccm]: 10''' | ||
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 6.5 | *'''C<sub>4</sub>F<sub>8</sub> flow [sccm]: 6.5''' | ||
*He flow [sccm]:100 | *'''He flow [sccm]:100''' | ||
*Pressure:Fully open APC valve (<2 mTorr) | *Pressure:Fully open APC valve ('''<2 mTorr''') | ||
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A' | *Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A' | ||
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*Coil Power [W]:300 | *'''Coil Power [W]:300''' | ||
*Platen Power [W]: 25 | *'''Platen Power [W]: 25''' | ||
*Platen temperature [<sup>o</sup>C]: 20 | *Platen temperature [<sup>o</sup>C]: 20 | ||
*H2 flow [sccm]:0 | *H2 flow [sccm]:0 | ||
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*'''45 min''' | |||
*Coil Power [W]:300 | *Coil Power [W]:300 | ||
*Platen Power [W]: 25 | *Platen Power [W]: 25 | ||
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*Coil Power [W]:300 | *Coil Power [W]:300 | ||
*Platen Power [W]: 20 | *'''Platen Power [W]: 20''' | ||
*Platen temperature [<sup>o</sup>C]: 20 | *Platen temperature [<sup>o</sup>C]: 20 | ||
*H2 flow [sccm]:0 | *H2 flow [sccm]:0 | ||