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Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,317 edits
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*'''On 6" wafer'''
*Coil Power [W]:2500
*Coil Power [W]:2500
*Platen Power [W]: 200
*Platen Power [W]: 200
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*'''Piece on Si carrier'''
*Coil Power [W]:2500
*Coil Power [W]:2500
*Platen Power [W]: 200
*Platen Power [W]: 200
Line 134: Line 136:
*Platen Power [W]: 200
*Platen Power [W]: 200
*Platen temperature [<sup>o</sup>C]: 20
*Platen temperature [<sup>o</sup>C]: 20
*H2 flow [sccm]:0
*'''H2 flow [sccm]:0'''
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 25.6
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 25.6
*He flow [sccm]:448.7
*He flow [sccm]:448.7
Line 155: Line 157:
*Platen temperature [<sup>o</sup>C]: 20
*Platen temperature [<sup>o</sup>C]: 20
*H2 flow [sccm]:0
*H2 flow [sccm]:0
*O2 flow [sccm]: 5
*'''O2 flow [sccm]: 5'''
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 25.6
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 25.6
*He flow [sccm]:448.7
*He flow [sccm]:448.7
Line 177: Line 179:
*H2 flow [sccm]:0
*H2 flow [sccm]:0
*O2 flow [sccm]: 0
*O2 flow [sccm]: 0
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 13.0
*'''C<sub>4</sub>F<sub>8</sub> flow [sccm]: 13.0'''
*He flow [sccm]:225
*'''He flow [sccm]:225'''
*Pressure:Fully open APC valve (3.35 mTorr)
*Pressure:Fully open APC valve ('''3.35 mTorr''')
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'  
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'  
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
Line 193: Line 195:
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*Coil Power [W]:1200
*'''Coil Power [W]:1200'''
*Platen Power [W]: 150
*'''Platen Power [W]: 150'''
*Platen temperature [<sup>o</sup>C]: 20
*Platen temperature [<sup>o</sup>C]: 20
*H2 flow [sccm]:0
*H2 flow [sccm]:0
Line 218: Line 220:
*Platen temperature [<sup>o</sup>C]: 20
*Platen temperature [<sup>o</sup>C]: 20
*H2 flow [sccm]:0
*H2 flow [sccm]:0
*O2 flow [sccm]: 10
*'''O2 flow [sccm]: 10'''
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 13.0
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 13.0
*He flow [sccm]:215
*'''He flow [sccm]:215'''
*Pressure:Fully open APC valve (3.35 mTorr)
*Pressure:Fully open APC valve (3.35 mTorr)
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'  
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'  
Line 239: Line 241:
*Platen temperature [<sup>o</sup>C]: 20
*Platen temperature [<sup>o</sup>C]: 20
*H2 flow [sccm]:0
*H2 flow [sccm]:0
*O2 flow [sccm]: 20
*'''O2 flow [sccm]: 20'''
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 13.0
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 13.0
*He flow [sccm]:205
*'''He flow [sccm]:205'''
*Pressure:Fully open APC valve (3.35 mTorr)
*Pressure:Fully open APC valve (3.35 mTorr)
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'  
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'  
Line 257: Line 259:
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*Coil Power [W]:1800
*'''Coil Power [W]:1800'''
*Platen Power [W]: 150
*Platen Power [W]: 150
*Platen temperature [<sup>o</sup>C]: 20
*Platen temperature [<sup>o</sup>C]: 20
*H2 flow [sccm]:0
*H2 flow [sccm]:0
*O2 flow [sccm]: 10
*'''O2 flow [sccm]: 10'''
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 13.0
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 13.0
*He flow [sccm]:215
*'''He flow [sccm]:215'''
*Pressure:Fully open APC valve (3.35 mTorr)
*Pressure:Fully open APC valve (3.35 mTorr)
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'  
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'  
Line 282: Line 284:
*Platen temperature [<sup>o</sup>C]: 20
*Platen temperature [<sup>o</sup>C]: 20
*H2 flow [sccm]:0
*H2 flow [sccm]:0
*O2 flow [sccm]: 20
*'''O2 flow [sccm]: 20'''
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 13.0
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 13.0
*He flow [sccm]:205
*'''He flow [sccm]:205'''
*Pressure:Fully open APC valve (3.6 mTorr)
*Pressure:Fully open APC valve (3.6 mTorr)
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'  
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'  
Line 298: Line 300:
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*Coil Power [W]:1800
*'''Coil Power [W]:1200'''
*Platen Power [W]: 150
*'''Platen Power [W]: 100'''
*Platen temperature [<sup>o</sup>C]: 20
*Platen temperature [<sup>o</sup>C]: 20
*H2 flow [sccm]:0
*H2 flow [sccm]:0
Line 330: Line 332:
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN  
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN  
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<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch (PLEASE DO NOT REPEAT THIS LONG TIME), H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W" perrow="7" widths="200px" heights="150px">
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier '''14 min etch''' (PLEASE DO NOT REPEAT THIS LONG TIME), H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W" perrow="7" widths="200px" heights="150px">
File:C10160_02.jpg
File:C10160_02.jpg
File:C10160_06.jpg
File:C10160_06.jpg
Line 341: Line 343:
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*Coil Power [W]:1800
*'''Coil Power [W]:1800'''
*Platen Power [W]: 150
*'''Platen Power [W]: 150'''
*Platen temperature [<sup>o</sup>C]: 20
*Platen temperature [<sup>o</sup>C]: 20
*H2 flow [sccm]:0
*H2 flow [sccm]:0
Line 352: Line 354:
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN  
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN  
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<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 10 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W" perrow="6" widths="200px" heights="150px">
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier '''10 min etch''', H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W" perrow="6" widths="200px" heights="150px">
File:C10161_01.jpg
File:C10161_01.jpg
File:C10161_03.jpg
File:C10161_03.jpg
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