Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions
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</gallery> | </gallery> | ||
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*Coil Power [W]:2500 | |||
*Platen Power [W]: 200 | |||
*Platen temperature [<sup>o</sup>C]: 20 | |||
*H2 flow [sccm]:0 | |||
*O2 flow [sccm]: 20 | |||
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 13.0 | |||
*He flow [sccm]:205 | |||
*Pressure:Fully open APC valve (3.9 mTorr) | |||
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A' | |||
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<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.9mTorr; platen power 200W, coil power:2500W" perrow="7" widths="200px" heights="150px"> | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.9mTorr; platen power 200W, coil power:2500W" perrow="7" widths="200px" heights="150px"> | ||
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</gallery> | </gallery> | ||
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| | | | ||
*Coil Power [W]:2500 | |||
*Platen Power [W]: 200 | |||
*Platen temperature [<sup>o</sup>C]: 20 | |||
*H2 flow [sccm]:25.6 | |||
*O2 flow [sccm]: 0 | |||
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 25.6 | |||
*He flow [sccm]:448.7 | |||
*Pressure:Fully open APC valve (8-9 mTorr) | |||
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A' | |||
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<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0" perrow="7" widths="200px" heights="150px"> | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0" perrow="7" widths="200px" heights="150px"> | ||