Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions
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*Coil Power [W]: | *Coil Power [W]:1800 | ||
*Platen Power [W]: 150 | *Platen Power [W]: 150 | ||
*Platen temperature [<sup>o</sup>C]: 20 | *Platen temperature [<sup>o</sup>C]: 20 | ||