Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride: Difference between revisions
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*[[/Deposition of low stress nitride using the 6" LPCVD nitride furnace|Deposition of low stress nitride using the 6" LPCVD nitride furnace ]] | *[[/Deposition of low stress nitride using the 6" LPCVD nitride furnace|Deposition of low stress nitride using the 6" LPCVD nitride furnace ]] | ||
*[[/Deposition of stoichiometric nitride using the 6" LPCVD nitride furnace|Deposition of stoichiometric nitride using the 6" LPCVD nitride furnace <span style="color:Red">(4" wafers need a special permission as a back up of 4" | *[[/Deposition of stoichiometric nitride using the 6" LPCVD nitride furnace|Deposition of stoichiometric nitride using the 6" LPCVD nitride furnace <span style="color:Red">(4" wafers need a special permission using as a back up of 4" LPCVD nitride furnace , B2)</span>]] | ||
*[[/Using LPCVD silicon nitride as a masking material for KOH etching|Using LPCVD silicon nitride as a masking material for KOH etching]] | *[[/Using LPCVD silicon nitride as a masking material for KOH etching|Using LPCVD silicon nitride as a masking material for KOH etching]] | ||