Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch: Difference between revisions
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==SiO2 etch with Cr mask== | ==SiO2 etch with Cr mask== | ||
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*[[/Cr mask|More tests with Cr mask]] | |||
===Testing with electromagnetic coils /Cr mask=== | ===Testing with electromagnetic coils /Cr mask=== | ||
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When testing with decreased platen power on the SiO2_10 standard recipe the uniformity got very bad. I then tested with the electromagnetics coil to see if that could affect the uniformity. There is an outer coil that can be varied between 0 A and 10 A and an inner coil that can be varied between 0 A and 30 A. The first tests were done on Si/SiO2(1µm) without pattern and measured on the ellipsometer. | When testing with decreased platen power on the SiO2_10 standard recipe the uniformity got very bad. I then tested with the electromagnetics coil to see if that could affect the uniformity. There is an outer coil that can be varied between 0 A and 10 A and an inner coil that can be varied between 0 A and 30 A. The first tests were done on Si/SiO2(1µm) without pattern and measured on the ellipsometer. | ||