Specific Process Knowledge/Lithography/EBeamLithography/AR-P 617: Difference between revisions
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A contrast curve for AR-P 617.06 is provided below based on exposure at 100 kV for doses from 2.5 to 200 µC/cm<sup>2</sup>. The dose clear is dependent on softbake temperature, in this case 200C and 180C is used. Process parameters are: | A contrast curve for AR-P 617.06 is provided below based on exposure at 100 kV for doses from 2.5 to 200 µC/cm<sup>2</sup>. The dose clear is dependent on softbake temperature, in this case 200C and 180C is used. Process parameters are: | ||
*Date: | *Date: February 5th 2024 | ||
*Coater: LabSpin 2 | *Coater: LabSpin 2 | ||
*Substrate: 2" Si | *Substrate: 2" Si | ||
*Acceleration: 1000 RPM/s | *Acceleration: 1000 RPM/s | ||
*Time: 60 s | *Time: 60 s | ||
*Baking temperature: 200C and | *Baking temperature: 200C, 180C and 160C | ||
*Baking time: 120 s | *Baking time: 120 s | ||
*Exposure: 100 kV (JEOL 9500) | *Exposure: 100 kV (JEOL 9500) | ||
*Development: AR 600-50 for | *Development: AR 600-50 for 90 seconds | ||
*Stopper: IPA for 30 seconds + blow dry with nitrogen | *Stopper: IPA for 30 seconds + blow dry with nitrogen | ||
Revision as of 12:51, 7 February 2024
AR-P 617 is a positive PMMA based E-beam resist from Allresist. Process information provided by Allresist can be found here.
Spin coating
AR-P 617 can be spin coated on LabSpin 2 and 3 using the CSAR/PMMA bowlset. A spin curve for AR-P 617.06 is provided below. Process parameters are:
- Date: January 22nd 2024
- Coater: LabSpin 3
- Substrate: 2" Si
- Acceleration: 1000 RPM/s
- Time: 60 s
- Baking temperature: 200C (setpoint at 222C)
- Baking time: 120 s
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AR-P 617.06 spin curve. |
Resulting resist thickness can be determined as y = axb+c, where y is thickness [nm], x is spin speed [RPM], a = 65274, b = -0.748 and c = 163.1.
Contrast curve
A contrast curve for AR-P 617.06 is provided below based on exposure at 100 kV for doses from 2.5 to 200 µC/cm2. The dose clear is dependent on softbake temperature, in this case 200C and 180C is used. Process parameters are:
- Date: February 5th 2024
- Coater: LabSpin 2
- Substrate: 2" Si
- Acceleration: 1000 RPM/s
- Time: 60 s
- Baking temperature: 200C, 180C and 160C
- Baking time: 120 s
- Exposure: 100 kV (JEOL 9500)
- Development: AR 600-50 for 90 seconds
- Stopper: IPA for 30 seconds + blow dry with nitrogen
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AR-P 617.06 contrast curve. |