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Specific Process Knowledge/Etch/ICP Metal Etcher: Difference between revisions

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Bureaucrats, danchip, Administrators
1,918 edits
Line 18: Line 18:
![[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinan33-2|Sinano3.3]]
![[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinan33-2|Sinano3.3]]
![[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinan37|Sinano3.7]]
![[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinan37|Sinano3.7]]
![[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinan331|Sinano3.31]]
|-
|-
!Cl<sub>2</sub> (sccm)
!Cl<sub>2</sub> (sccm)
Line 30: Line 31:
|0
|0
|0
|0
|
|-
|-
!BCl<sub>3</sub> (sccm)
!BCl<sub>3</sub> (sccm)
Line 42: Line 44:
|5
|5
|5
|5
|
|-
|-
!HBr (sccm)
!HBr (sccm)
Line 54: Line 57:
|15
|15
|15
|15
|
|-
|-
! Coil power (W)
! Coil power (W)
Line 66: Line 70:
|900 (Forward)
|900 (Forward)
|900 (Load)
|900 (Load)
|
|-
|-
!Platen power (W)
!Platen power (W)
Line 78: Line 83:
|75
|75
|60
|60
|
|-
|-
! Pressure (mtorr)
! Pressure (mtorr)
Line 90: Line 96:
|2
|2
|10
|10
|
|-
|-
!Temperature (<sup>o</sup>C)
!Temperature (<sup>o</sup>C)
Line 102: Line 109:
| 20
| 20
| 50
| 50
|
|-
|-
! Process time (s)
! Process time (s)
Line 114: Line 122:
|300
|300
|180
|180
|
|-
|-
! Nominal line width
! Nominal line width
! colspan="10" align="center"| Etched depths (nm)
! colspan="11" align="center"| Etched depths (nm)
|-
|-
! 30 nm
! 30 nm
Line 128: Line 137:
|170
|170
|295
|295
|
|
|
|-
|-
Line 140: Line 150:
|185
|185
|411
|411
|
|
|
|-
|-
Line 152: Line 163:
|253
|253
|566
|566
|
|
|
|-
|-
Line 164: Line 176:
|278
|278
|600
|600
|
|-
|-
!150 nm
!150 nm
Line 175: Line 188:
|280
|280
|647
|647
|
|
|
|-
|-
! Nominal line width
! Nominal line width
! colspan="10" align="center"| Etch rates in trenches (nm/min)
! colspan="11" align="center"| Etch rates in trenches (nm/min)
|-
|-
!30 nm
!30 nm
Line 190: Line 204:
|57
|57
|59
|59
|
|
|
|-
|-
Line 202: Line 217:
|62
|62
|82
|82
|
|
|
|-
|-
Line 214: Line 230:
|84
|84
|113
|113
|
|
|
|-
|-
Line 226: Line 243:
|93
|93
|120
|120
|
|
|
|-
|-
Line 238: Line 256:
|93
|93
|129
|129
|
|
|
|-
|-
|
|
! colspan="10" align="center"| zep mask parameters
! colspan="12" align="center"| zep mask parameters
|-
|-
! start (end)
! start (end)
Line 253: Line 272:
| [[Specific Process Knowledge/Etch/ICP Metal Etcher/nanoetch/180nmzep|180 (64)]]
| [[Specific Process Knowledge/Etch/ICP Metal Etcher/nanoetch/180nmzep|180 (64)]]
| [[Specific Process Knowledge/Etch/ICP Metal Etcher/nanoetch/340nmzep|348 (53)]]
| [[Specific Process Knowledge/Etch/ICP Metal Etcher/nanoetch/340nmzep|348 (53)]]
|
|
|
|-
|-
! zep etch rate (nm/min)
! zep etch rate (nm/min)
|18
| 18
|27
| 27
|35
| 35
|39
| 39
|54
| 54
|45
| 45
|38
| 38
|39
| 39
|59
| 59
|
|
|
|-
|-
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/ICP_Metal_Etcher"