Specific Process Knowledge/Etch/ICP Metal Etcher: Difference between revisions
| Line 29: | Line 29: | ||
|15 | |15 | ||
|0 | |0 | ||
| | |0 | ||
|- | |- | ||
!BCl<sub>3</sub> (sccm) | !BCl<sub>3</sub> (sccm) | ||
| Line 41: | Line 41: | ||
|5 | |5 | ||
|5 | |5 | ||
| | |5 | ||
|- | |- | ||
!HBr (sccm) | !HBr (sccm) | ||
| Line 53: | Line 53: | ||
|0 | |0 | ||
|15 | |15 | ||
| | |15 | ||
|- | |- | ||
! Coil power (W) | ! Coil power (W) | ||
| Line 65: | Line 65: | ||
|900 (Forward) | |900 (Forward) | ||
|900 (Forward) | |900 (Forward) | ||
| | |900 (Load) | ||
|- | |- | ||
!Platen power (W) | !Platen power (W) | ||
| Line 77: | Line 77: | ||
|60 | |60 | ||
|75 | |75 | ||
| | |60 | ||
|- | |- | ||
! Pressure (mtorr) | ! Pressure (mtorr) | ||
| Line 89: | Line 89: | ||
|10 | |10 | ||
|2 | |2 | ||
| | |10 | ||
|- | |- | ||
!Temperature (<sup>o</sup>C) | !Temperature (<sup>o</sup>C) | ||
| Line 113: | Line 113: | ||
|180 | |180 | ||
|300 | |300 | ||
| | |180 | ||
|- | |- | ||
! Nominal line width | ! Nominal line width | ||
Revision as of 09:36, 4 April 2011
Etching of nanostructures in silicon using the ICP Metal Etcher or DRIE Pegasus
| Recipe | Sinano3.0 | Sinano3.1 | Sinano3.2 | Sinano3.3 | Sinano3.4 | Sinano4.0 | Sinano3.5 | Sinano3.6 | Sinano3.3 | Sinano3.7 |
|---|---|---|---|---|---|---|---|---|---|---|
| Cl2 (sccm) | 0 | 0 | 0 | 0 | 0 | 20 | 15 | 15 | 0 | 0 |
| BCl3 (sccm) | 5 | 3 | 5 | 5 | 5 | 0 | 5 | 5 | 5 | 5 |
| HBr (sccm) | 15 | 17 | 15 | 15 | 15 | 0 | 0 | 0 | 15 | 15 |
| Coil power (W) | 900 (Load) | 900 (Forward) | 900 (Forward) | 900 (Forward) | 900 (Forward) | 900 (Load) | 900 (Load) | 900 (Forward) | 900 (Forward) | 900 (Load) |
| Platen power (W) | 50 | 50 | 60 | 75 | 90 | 60 | 60 | 60 | 75 | 60 |
| Pressure (mtorr) | 2 | 2 | 2 | 2 | 2 | 2 | 5 | 10 | 2 | 10 |
| Temperature (oC) | 20 | 20 | 20 | 20 | 20 | 20 | 20 | 20 | 20 | 50 |
| Process time (s) | 150 | 180 | 120 | 180 | 120 | 90 | 120 | 180 | 300 | 180 |
| Nominal line width | Etched depths (nm) | |||||||||
| 30 nm | 198 | 231 | 147 | 214 | 163 | 227 | 185 | 170 | 295 | |
| 60 nm | 256 | 308 | 181 | 305 | 229 | 253 | 191 | 185 | 411 | |
| 90 nm | 259 | 335 | 195 | 342 | 255 | 251 | 222 | 253 | 566 | |
| 120 nm | 277 | 346 | 203 | 357 | 262 | 257 | 221 | 278 | 600 | |
| 150 nm | 269 | 341 | 205 | 369 | 265 | 262 | 225 | 280 | 647 | |
| Nominal line width | Etch rates in trenches (nm/min) | |||||||||
| 30 nm | 79 | 77 | 74 | 71 | 82 | 151 | 93 | 57 | 59 | |
| 60 nm | 102 | 103 | 91 | 102 | 115 | 169 | 96 | 62 | 82 | |
| 90 nm | 104 | 112 | 98 | 114 | 128 | 167 | 111 | 84 | 113 | |
| 120 nm | 111 | 115 | 102 | 119 | 131 | 171 | 111 | 93 | 120 | |
| 150 nm | 108 | 114 | 103 | 123 | 133 | 175 | 113 | 93 | 129 | |
| zep mask parameters | ||||||||||
| start (end) | 110 (64) | 178 (96) | 180 (110) | 180 (64) | 180 (72) | 110 (43) | 110 (34) | 180 (64) | 348 (53) | |
| zep etch rate (nm/min) | 18 | 27 | 35 | 39 | 54 | 45 | 38 | 39 | 59 | |