Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano12: Difference between revisions
| Line 31: | Line 31: | ||
|- | |- | ||
| Mask | | Mask | ||
| | | 343 nm zep etched down to 154 nm | ||
|- | |- | ||
|} | |} | ||
| Line 44: | Line 44: | ||
C4F8 52 sccm, SF6 38 sccm, 4 mTorr, Strike 3 secs @ 15 mTorr, 800 W CP, 50 W PP, -10 degs, 120 secs | C4F8 52 sccm, SF6 38 sccm, 4 mTorr, Strike 3 secs @ 15 mTorr, 800 W CP, 50 W PP, -10 degs, 120 secs | ||
</gallery> | </gallery> | ||
== Comments == | == Comments == | ||
Lower temperature certainly looks like a step in the right direction. Confirms that the process was too etch aggressive previously, hence the isotropic profiles. | Lower temperature certainly looks like a step in the right direction. Confirms that the process was too etch aggressive previously, hence the isotropic profiles. | ||