Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano10: Difference between revisions
| Line 63: | Line 63: | ||
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| Gas Flow (sccm) | | Gas Flow (sccm) | ||
| SF<sub>6</sub> 38 + C<sub>4</sub>F<sub>8</sub> 70 | | SF<sub>6</sub> 38 + '''C<sub>4</sub>F<sub>8</sub> 70''' | ||
|- | |- | ||
| Pressure (mT) | | Pressure (mT) | ||
| Line 72: | Line 72: | ||
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| Coil power (W) | | Coil power (W) | ||
| 450 | | '''450''' | ||
|- | |- | ||
| Matching (Forward/ Load) | | Matching (Forward/ Load) | ||
| Line 78: | Line 78: | ||
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| HF Platen power (W) | | HF Platen power (W) | ||
| 100 | | '''100''' | ||
|- | |- | ||
| Matching (Forward/ Load) | | Matching (Forward/ Load) | ||
| Line 95: | Line 95: | ||
| 10°C | | 10°C | ||
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The highlighted sections are the main differences between the Process C conditions Vs new Imprint Trenches conditions: all of the changes would push the process to be more passivant, less etch aggressive and more directional. | |||
Is there any reason why these conditions are not suitable for the Imprint Trenches etch? | |||