Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-3/SiO2 etch: Difference between revisions
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|+ Tests with SiO2 etch | |+ Tests with SiO2 etch | ||
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! Wafer number !! C4F8 !! SF6 flow !! Ar !! Platen power !! Pressure || Uniformity results || Center Etch rate | ! Wafer number !! C4F8 !! SF6 flow !! Ar !! Platen power !! Pressure || SiO2 Uniformity results || SiO2 Center Etch rate ||Si Center Etch rate || Si Uniformity | ||
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| Y34 || 50 sccm|| 50 sccm|| 0 sccm|| 100 W || 80 mTorr || ±23.3% || 36.0 nm/min (highest) | | Y34 || 50 sccm|| 50 sccm|| 0 sccm|| 100 W || 80 mTorr || ±23.3% || 36.0 nm/min (highest)|| || | ||
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| Y35 || 25 sccm|| 75 sccm|| 0 sccm|| 100 W || 80 mTorr || ±20.8% || 41.3 nm/min (highest) | | Y35 || 25 sccm|| 75 sccm|| 0 sccm|| 100 W || 80 mTorr || ±20.8% || 41.3 nm/min (highest) || || | ||
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| Y36 || 25 sccm|| 75 sccm|| 0 sccm|| 100 W || 10 mTorr || ±22.1% || 36.2 nm/min (lowest) | | Y36 || 25 sccm|| 75 sccm|| 0 sccm|| 100 W || 10 mTorr || ±22.1% || 36.2 nm/min (lowest) || || | ||
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| Y37 ||25 sccm|| 75 sccm|| 0 sccm|| 100 W || 40 mTorr || ±24.6% || 24.4 nm/min (lowest) | | Y37 ||25 sccm|| 75 sccm|| 0 sccm|| 100 W || 40 mTorr || ±24.6% || 24.4 nm/min (lowest) || || | ||
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| Y38 || 25 sccm|| 75 sccm|| 0 sccm|| 100 W || 60 mTorr || ± 8.1% || 34.0 nm/min (highest in center and at edge) | | Y38 || 25 sccm|| 75 sccm|| 0 sccm|| 100 W || 60 mTorr || ± 8.1% || 34.0 nm/min (highest in center and at edge) || 141.4@15s, 137.5@2min || ± 13.9%@15s, 16.5%@2min | ||
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| Y39 || 50 sccm|| 150 sccm|| 0 sccm|| 100 W || 10 mTorr || ±25.0% || 34.8 nm/min (lowest) | | Y39 || 50 sccm|| 150 sccm|| 0 sccm|| 100 W || 10 mTorr || ±25.0% || 34.8 nm/min (lowest) | ||