Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-3/SiO2 etch: Difference between revisions
| Line 27: | Line 27: | ||
| Y40 || 8.33 sccm|| 50 sccm|| 100 sccm|| 100 W || 10 mTorr | | Y40 || 8.33 sccm|| 50 sccm|| 100 sccm|| 100 W || 10 mTorr | ||
|} | |} | ||
[[File:Peg3 SiO2 uniformity Y34 to Y40.jpg|400px]] | |||
[[File:Peg3 SiO2 uniformity normalized Y34 to Y40.jpg|400px]] | |||
[[File:Peg3 SIO2 uniformity - Contour Plot 5.jpg|400px]] | [[File:Peg3 SIO2 uniformity - Contour Plot 5.jpg|400px]] | ||