Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-3/SiO2 etch: Difference between revisions
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| Line 21: | Line 21: | ||
| Y37 ||25 sccm|| 75 sccm|| 0 sccm|| 100 W || 40 mTorr | | Y37 ||25 sccm|| 75 sccm|| 0 sccm|| 100 W || 40 mTorr | ||
|- | |- | ||
| Y38 || | | Y38 || 25 sccm|| 75 sccm|| 0 sccm|| 100 W || 60 mTorr | ||
|- | |- | ||
| Y39 || | | Y39 || 50 sccm|| 150 sccm|| 0 sccm|| 100 W || 10 mTorr | ||
|- | |- | ||
| Y40 || | | Y40 || 8.33 sccm|| 50 sccm|| 100 sccm|| 100 W || 10 mTorr | ||
|} | |} | ||
[[File:Peg3 SIO2 uniformity - Contour Plot 5.jpg|400px]] | [[File:Peg3 SIO2 uniformity - Contour Plot 5.jpg|400px]] | ||