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Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions

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<gallery caption=" C10752: SiO2 etch with Cr mask on wafer piece on Si carrier 20 min etch, EM:0/0 H2:0sccm, C4F8:6.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 25W, coil power:300W" perrow="7" widths="200px" heights="150px">
<gallery caption=" C10752: SiO2 etch with Cr mask on wafer piece on Si carrier 30 min etch, EM:0/0 H2:0sccm, C4F8:6.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 25W, coil power:300W" perrow="7" widths="200px" heights="150px">
File:C10752_09.jpg
File:C10752_09.jpg
File:C10752_07.jpg
File:C10752_07.jpg
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