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Specific Process Knowledge/Thin film deposition/Deposition of Gold: Difference between revisions

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! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Resistive thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal Evaporator]])
! Sputter ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
! Sputter ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
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| E-beam deposition of Au
| E-beam deposition of Au
| E-beam deposition of Au
| E-beam deposition of Au
| Resistive thermal deposition of Au
| Sputter deposition of Au
| Sputter deposition of Au
| Sputter deposition of Au
| Sputter deposition of Au
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! Pre-clean
! Pre-clean
|Ar ion etch (only in E-beam evaporator Temescal)
|Ar ion etch (only in E-beam evaporator Temescal)
|
|
|
|RF Ar clean
|RF Ar clean
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|10 Å to 1 µm *
|10 Å to 1 µm *
|10 Å to 1 µm *
|10 Å to 1 µm *
|10 Å to 200 nm
|10 Å to 5000 Å **
|10 Å to 5000 Å **
|10 Å to 5000 Å **
|10 Å to 5000 Å **
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|0.5-10 Å/s (in 10-pocket machine only up to 5 Å/s as material is deposited from a liner)
|0.5-10 Å/s (in 10-pocket machine only up to 5 Å/s as material is deposited from a liner)
|1-10 Å/s
|1-10 Å/s
|1 Å/s (can be adjusted to around 5Å/s)
|Depends on process parameters, 1-10 Å/s  
|Depends on process parameters, 1-10 Å/s  
|Depends on process parameters
|Depends on process parameters
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*6x4" wafers or
*6x4" wafers or
*6x6" wafers
*6x6" wafers
|
*4x2" wafers or
*3x4" wafers or
*1x6" wafer
*1x8" wafer
*many smaller pieces
|
|
*Pieces or
*Pieces or
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* SU-8  
* SU-8  
* Metals  
* Metals  
|
* Almost any as long as it does not outgas - see cross-contamination sheets in Labmanager
|
|
* Silicon
* Silicon
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|
|
* Takes approx. 1 hour to pump down.
* Takes approx. 1 hour to pump down.
|
*Make sure that all pellets are melted beforehand
|
|
*Takes approx. 10 minutes to load and transfer sample
*Takes approx. 10 minutes to load and transfer sample
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