Specific Process Knowledge/Thin film deposition/Deposition of Silver: Difference between revisions
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! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]]) | ||
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal Evaporator]]) | ! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal Evaporator]]) | ||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]]) | ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]]) | ||
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| E-beam deposition of Ag (line-of-sight, very good thickness uniformity) | | E-beam deposition of Ag (line-of-sight, very good thickness uniformity) | ||
| Thermal deposition of Ag (line-of-sight) | | Thermal deposition of Ag (line-of-sight) | ||
| Sputter deposition of Ag (some step coverage) | | Sputter deposition of Ag (some step coverage) | ||
| Sputter deposition of Ag including pulsed DC and HiPIMS | | Sputter deposition of Ag including pulsed DC and HiPIMS | ||
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! Pre-clean | ! Pre-clean | ||
| Ar ion etch (only in E-beam evaporator Temescal) | | Ar ion etch (only in E-beam evaporator Temescal) | ||
| none | | none | ||
| RF Ar clean | | RF Ar clean | ||
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|10Å to 1µm* | |10Å to 1µm* | ||
|10Å to 0.5µm ** | |10Å to 0.5µm ** | ||
|10Å to about 2000Å | |10Å to about 2000Å | ||
|10Å to ? | |10Å to ? | ||
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|1 to 10Å/s | |1 to 10Å/s | ||
|5Å/s | |5Å/s | ||
|Dependent on process parameters. | |Dependent on process parameters. | ||
|Dependent on process parameters. | |Dependent on process parameters. | ||
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*Up to 3x4" wafers | *Up to 3x4" wafers | ||
*smaller pieces | *smaller pieces | ||
| | | | ||
*1x6" wafers or | *1x6" wafers or | ||
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| | | | ||
*Almost any as long as it does not outgas if you plan to use substrate heating. See cross-contamination sheets in Labmanager. | *Almost any as long as it does not outgas if you plan to use substrate heating. See cross-contamination sheets in Labmanager. | ||
| | | | ||
*Almost any as long as it does not outgas. See cross-contamination sheets in Labmanager. | *Almost any as long as it does not outgas. See cross-contamination sheets in Labmanager. | ||
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| Pumpdown approx 20 min. Possible to tilt the wafer to achieve tunable step coverage. | | Pumpdown approx 20 min. Possible to tilt the wafer to achieve tunable step coverage. | ||
| Pumpdown approx 15 min. | | Pumpdown approx 15 min. | ||
|Load and transfer < 10 minutes | |Load and transfer < 10 minutes | ||
|Load and transfer approx. 12 minutes | |Load and transfer approx. 12 minutes | ||