Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide: Difference between revisions
No edit summary |
No edit summary |
||
| Line 3: | Line 3: | ||
''All contents by DTU Nanolab staff.'' | ''All contents by DTU Nanolab staff.'' | ||
Deposition of Silicon Oxide can be done | Deposition of Silicon Oxide can be done here at DTU Nanolab by LPCVD, PECVD, sputtering, or e-beam evaporation. In our cleanroom it is also possible to '''grow''' silicon oxide using a silicon surface as a starting point. This can be done with wet chemistry in a beaker (see below), or as a [[Specific Process Knowledge/Thermal Process/Oxidation|thermal oxide]] in a hot furnace. | ||
==Deposition of Silicon Oxide using LPCVD== | ==Deposition of Silicon Oxide using LPCVD== | ||