Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide: Difference between revisions

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 ==Deposition of Silicon Oxide using ALD==
-Thin films of silicon oxide up to 50 nm can be deposited in the [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2]]. The ALD2 uses the plasma source and can therefore only deposit on one wafer at a time. The deposition takes place at 300 <sup>o</sup>C, where the growth rate is 0.1222nm on flat samples. It is also possible to deposit uniform layers on high aspect ratio structures with a growth rate of 0.1629 nm/cycle.
+Formerly it was possible to deposit thin films of silicon oxide up to 50 nm in the [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2]]. This is unfortunately no longer possible. You can read about the results of depositions in the past here: [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/SiO2 deposition using ALD2|Deposition of Silicon Oxide using ALD2]].
-*[[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/SiO2 deposition using ALD2|Deposition of Silicon Oxide using ALD2]]
 ==Deposition of Silicon Oxide using e-beam evaporation==