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Specific Process Knowledge/Thin film deposition/Deposition of Silicon: Difference between revisions

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* [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter in Sputter-System Metal-Oxide(PC3)|Si sputter deposition in the  Sputter-System Metal-Oxide(PC3)]]
* [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter in Sputter-System Metal-Oxide(PC3)|Si sputter deposition in the  Sputter-System Metal-Oxide(PC3)]]


 
It was previosly possible to sputter Si with our [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300| IonFab 300]]. You can read about the deposition conditions and results from that [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBSD of Si|here]].
Historical note: It was previosly possible to sputter Si with our [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300| IonFab 300]]. You can read about the deposition conditions and results from that [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBSD of Si|here]].


==Deposition of Silicon using PECVD==
==Deposition of Silicon using PECVD==
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon"