Specific Process Knowledge/Thin film deposition/Lesker: Difference between revisions
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* usually room temp | * usually room temp | ||
* We used to have sample heating to to more than 400°. However, this is not possible at the moment. | * We used to have sample heating to to more than 400°. However, this is not possible at the moment. | ||
* For sputtering with sample heating, please see [[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3) ]] | |||
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|style="background:LightGrey; color:black"|Process pressure | |style="background:LightGrey; color:black"|Process pressure | ||