Specific Process Knowledge/Characterization/Stress measurement: Difference between revisions
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Examples of thin films that exhibit tensile stress include Cr, Pt, and Ni (evaporated or sputtered) as well as SiO2 made by LPCVD TEOS. SiN made by PECVD can exhibit either tensile or compressive stress. The same is true for sputtered Si. Thin films that exhibit compressive stress include e-beam evaporated Ti and Au. | Examples of thin films that exhibit tensile stress include Cr, Pt, and Ni (evaporated or sputtered) as well as SiO2 made by LPCVD TEOS. SiN made by PECVD can exhibit either tensile or compressive stress. The same is true for sputtered Si. Thin films that exhibit compressive stress include e-beam evaporated Ti and Au. | ||
*Here you can read in general about [[Specific Process Knowledge/Characterization/Stress measurement/Stress origins|stress in thin films]]. | *Here you can read in general about [[Specific Process Knowledge/Characterization/Stress measurement/Stress origins|stress in thin metal films]]. | ||
*Here you can find some information about [[Specific Process Knowledge/Thin film deposition/Lesker/Stress dependence on sputter parameters in the Lesker sputter system|stress in sputtered films]] made at Nanolab. | *Here you can find some information about [[Specific Process Knowledge/Thin film deposition/Lesker/Stress dependence on sputter parameters in the Lesker sputter system|stress in sputtered films]] made at Nanolab. | ||