Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano11: Difference between revisions
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C4F8 52 sccm, SF6 38 sccm, 4 mTorr, Strike 3 secs @ 15 mTorr, 600 W CP, 50 W PP, 10 degs, 120 secs | C4F8 52 sccm, SF6 38 sccm, 4 mTorr, Strike 3 secs @ 15 mTorr, 600 W CP, 50 W PP, 10 degs, 120 secs | ||
</gallery> | </gallery> | ||
== Comments == | |||
The lower coil power run may still be isotropic-looking either because of a lack of deposition in the process, or because the bias increases as the coil power is decreased, hence the wafer would have received a more phyisically-aggressive process. Lower temp, lower coil + lower platen may be worth a look. | |||