Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions
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|Annealing of wafers from Wafer Bonder 02 and from and PECVD4 and PECVD3. | |Annealing of wafers from Wafer Bonder 02 and from and PECVD4 and PECVD3. | ||
|Annealing of wafers with Al and ALD deposited AL2O3 and TiO2. | |Annealing of wafers with Al and ALD deposited AL2O3 and TiO2. | ||
| | |Resist pyrolysis | ||
|Rapid thermal processing, usually, annealing (RTA). | |Rapid thermal processing, usually, annealing (RTA). | ||
|Rapid thermal processing: RTA (annealing), RTO (oxidation), RTN (nitridation) and RTH (hydrogenation). | |Rapid thermal processing: RTA (annealing), RTO (oxidation), RTN (nitridation) and RTH (hydrogenation). | ||
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*N<sub>2</sub> | *N<sub>2</sub> | ||
* | *(H<sub>2</sub>-N<sub>2</sub> gas mixture) | ||
*Vacuum is possible | *Vacuum is possible | ||
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*Vacuum: 20 <sup>o</sup>C - 1050 <sup>o</sup>C¨ | *Vacuum: 20 <sup>o</sup>C - 1050 <sup>o</sup>C¨ | ||
*No vacuum: 20 <sup>o</sup>C - | *No vacuum: 20 <sup>o</sup>C - 1050 <sup>o</sup>C | ||
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*20 <sup>o</sup>C - 1200 <sup>o</sup>C | *20 <sup>o</sup>C - 1200 <sup>o</sup>C | ||
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*Wafers with Al | *Wafers with Al | ||
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* | *Samples for resist pyrolysis. | ||
*No metals allowed | |||
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*Silicon | *Silicon |
Revision as of 13:32, 1 November 2024
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Annealing
At DTU Nanolab we have five furnaces and two RTP (rapid thermal processor) that can be used for annealing: Anneal-Oxide furnace (C1), Anneal-bond furnace (C3), Al_anneal furnace (C4), Multipurpose Anneal furnace, RTP2 Jipelec and RTP Annealsys (last one, reserved to research). Annealing normally takes place in an N2 atmosphere, or it can be done in H2 or a H2-N2 gas mixture in the Multipurpose Anneal furnace. PECVD PBSG glass is annealed in a wet atmosphere which will also oxidize the silicon substrate.
A 20-minute N2 annealing step is also included in all recipes on the oxidation furnace, this annealing is done after the oxidation.
Comparison of the annealing furnaces
General description | Annealing of 4" and 6" wafers. Annealing of wafers from the LPCVD furnaces and from PECVD4. | Annealing of wafers from Wafer Bonder 02 and from and PECVD4 and PECVD3. | Annealing of wafers with Al and ALD deposited AL2O3 and TiO2. | Resist pyrolysis | Rapid thermal processing, usually, annealing (RTA). | Rapid thermal processing: RTA (annealing), RTO (oxidation), RTN (nitridation) and RTH (hydrogenation). |
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Annealing gas |
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Substrate and Batch size |
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Allowed materials |
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