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Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions

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|Annealing of wafers from Wafer Bonder 02 and from and PECVD4 and PECVD3.
|Annealing of wafers from Wafer Bonder 02 and from and PECVD4 and PECVD3.
|Annealing of wafers with Al and ALD deposited AL2O3 and TiO2.
|Annealing of wafers with Al and ALD deposited AL2O3 and TiO2.
|Annealing, oxidation and resist pyrolysis of different samples.
|Resist pyrolysis  
|Rapid thermal processing, usually, annealing (RTA).
|Rapid thermal processing, usually, annealing (RTA).
|Rapid thermal processing: RTA (annealing), RTO (oxidation), RTN (nitridation) and RTH (hydrogenation).
|Rapid thermal processing: RTA (annealing), RTO (oxidation), RTN (nitridation) and RTH (hydrogenation).
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*N<sub>2</sub>
*N<sub>2</sub>
*H<sub>2</sub>
*(H<sub>2</sub>-N<sub>2</sub> gas mixture)
*H<sub>2</sub>-N<sub>2</sub> gas mixture
*Vacuum is possible
*Vacuum is possible
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*Vacuum: 20 <sup>o</sup>C - 1050 <sup>o</sup>C¨
*Vacuum: 20 <sup>o</sup>C - 1050 <sup>o</sup>C¨
*No vacuum: 20 <sup>o</sup>C - 1100 <sup>o</sup>C
*No vacuum: 20 <sup>o</sup>C - 1050 <sup>o</sup>C
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*20 <sup>o</sup>C - 1200 <sup>o</sup>C
*20 <sup>o</sup>C - 1200 <sup>o</sup>C
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*Wafers with Al  
*Wafers with Al  
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*Depends on the furnace quartz ware:
*Samples for resist pyrolysis.
**Clean: Samples that have been RCA cleaned
*No metals allowed
**Metal: Almost all materials, permission is needed
**Resist (for pyrolysis)
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*Silicon
*Silicon
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