Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions
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*No vacuum: 20 <sup>o</sup>C - 1100 <sup>o</sup>C | *No vacuum: 20 <sup>o</sup>C - 1100 <sup>o</sup>C | ||
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*700 <sup>o</sup>C | *700 <sup>o</sup>C - 1200 <sup>o</sup>C | ||
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*1-50 200 mm wafers | *1-50 200 mm wafers | ||
*Small samples on a carrier wafer, horizontal | *Small samples on a carrier wafer, horizontal | ||
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*Single-wafer process | |||
*Chips on carrier | |||
*100 mm or 150 mm wafers | |||
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