Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions
| Line 33: | Line 33: | ||
|Annealing of wafers from Wafer Bonder 02 and from and PECVD4 and PECVD3. | |Annealing of wafers from Wafer Bonder 02 and from and PECVD4 and PECVD3. | ||
|Annealing of wafers with Al and ALD deposited AL2O3 and TiO2. | |Annealing of wafers with Al and ALD deposited AL2O3 and TiO2. | ||
|Rapid thermal annealing | |Rapid thermal processing, usually, annealing (RTA). | ||
|Annealing, oxidation and resist pyrolysis of different samples | |Annealing, oxidation and resist pyrolysis of different samples | ||
|- | |- | ||