Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano10: Difference between revisions

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New page: == The nano1.0 recipe == {| border="2" cellpadding="2" cellspacing="1" |+ '''Recipe nano1.0''' |- ! rowspan="6" align="center"| Recipe | Gas | C<sub>4</sub>F<sub>8</sub> 38 sccm, HBr 15 ...
 
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! rowspan="6" align="center"| Recipe
! rowspan="6" align="center"| Recipe
| Gas
| Gas
| C<sub>4</sub>F<sub>8</sub> 38 sccm, HBr 15 sccm
| C<sub>4</sub>F<sub>8</sub> 38 sccm, SF<sub>6</sub> 52 sccm
|-
|-
| Pressure
| Pressure
| 2 mTorr, Strike 3 secs @ 5 mTorr
| 4 mTorr, Strike 3 secs @ 15 mTorr
|-
|-
| Power
| Power
| 900 W CP, 50 W PP
| 800 W CP, 50 W PP
|-  
|-  
| Temperature
| Temperature
| 20 degs
| 10 degs
|-
|-
| Hardware
| Hardware
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|-
|-
| Time
| Time
| 150 secs
| 120 secs
|-
|-
! rowspan="3" align="center"| Conditions
! rowspan="3" align="center"| Conditions
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|-
|-
| Mask
| Mask
| 110 nm zep etched down to 64 nm
| 1dfhj10 nm zep etched down to 6dgh4 nm
|-  
|-  
|}
|}




<gallery caption="The results of the Sinano3.0 recipe" widths="250" heights="200" perrow="3">
<gallery caption="The results of the nano1.0 recipe" widths="250" heights="200" perrow="3">
image:WF_2A4_feb06_2011-030.jpg|The 30 nm trenches
image:WF_2C5_feb2011_030.jpg|The 30 nm trenches
image:WF_2A4_feb06_2011-060.jpg|The 60 nm trenches
image:WF_2C5_feb2011-060.jpg|The 60 nm trenches
image:WF_2A4_feb06_2011-090.jpg|The 90 nm trenches
image:WF_2C5_feb2011-090.jpg|The 90 nm trenches
image:WF_2A4_feb06_2011-120.jpg|The 120 nm trenches
image:WF_2C5_feb2011-120.jpg|The 120 nm trenches
image:WF_2A4_feb06_2011-150.jpg|The 150 nm trenches
image:WF_2C5_feb2011-150.jpg|The 150 nm trenches
BCl3 5 sccm, HBr 15 sccm, 2 mTorr, Strike 3 secs @ 5 mTorr, 900 W CP, 50 W PP, 20 degs, 180 secs
C4F8 52 sccm, SF6 38 sccm, 4 mTorr, Strike 3 secs @ 15 mTorr, 800 W CP, 50 W PP, 10 degs, 120 secs
</gallery>
</gallery>

Revision as of 10:28, 28 March 2011

The nano1.0 recipe

Recipe nano1.0
Recipe Gas C4F8 38 sccm, SF6 52 sccm
Pressure 4 mTorr, Strike 3 secs @ 15 mTorr
Power 800 W CP, 50 W PP
Temperature 10 degs
Hardware 100 mm Spacers
Time 120 secs
Conditions Run ID 417, 418 and 419
Conditioning Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
Mask 1dfhj10 nm zep etched down to 6dgh4 nm