Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions
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<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.9mTorr; platen power 200W, coil power:2500W" perrow="7" widths="200px" heights="150px"> | |||
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</gallery> | </gallery> | ||